Dr. Ashish Kumar Sharma

Assistant Professor - Selection Grade

 

PhD (Physics, 2013), Indian Institute of Technology Delhi, New Delhi.

MSc (Physics, 2007), Kurukshetra University, Kurukshetra.

 

Career Graph:

  • SERB Research Scientist, Inter-University Accelerator Centre, New Delhi. Oct. 2020– continuing.
  • DST INSPIRE Faculty, Inter-University Accelerator Centre, New Delhi, Aug. 2015- Sept. 2020.
  • Research Associate, Inter-University Accelerator Centre, New Delhi, May. 2013-Aug 2015.

 

Awards and Recognitions:

  • 69th Lindau Nobel Laureate Meeting alumni, July 2019.
  • ICTP grant to attend Conference on Modern Concepts and New Materials for Thermoelectricity at the ICTP, March 2019.
  • DST -IST for visiting Valladolid, Spain, 2017.
  • UGC/CSIR-JRF, SRF for PhD thesis 2007.
  • Life member of Ion Beam Society of India (IBSI), Semiconductor Society of India (SSI), Indian Physics Association (IPA).

 

Sponsored and Consultancy Projects

  • DST INSPIRE Faculty- 35 lakh, thermoelectric devices based on GaN.
  • SERB Research Scientist- 21 lakh- flexible thermoelectric generators
  • SEED Project- ~ 11 lakh- Development of thermoelectric characterisation facilities

 

Research Interests                                                               

Renewable energy sources like thermoelectric generators, perovskites solar cell, photodetectors, based on inorganic and organic materials; Flexible electronics and 2D materials; Wide bandgap semiconductor-based power devices using GaN, SiC, Ga2O3; Defects characterisation in solids; Low-temperature transport properties and 1/f noise measurements; Ion-matter interactions; Instrumentation for electrical characterisation of devices; DFT.

 

Research Contribution:

Published more than 45 research papers, 20 conference papers, 4 patents; with 630 Citations, h-index 17 and i10-index 22.  Developed 4 characterisation facilities, Running 3 funded projects.

News Article

  • Defect engineering in wide bandgap materials for thermoelectric applications.  Kumar A. SSI Newsletter, 04/2019, http://www.ssindia.org.in/images/ NewsLetter March2019.pdf

Referred Journals 

  • Kumar A., Singh S., Tak B.R., Patel A., Asokan K., Kanjilal D.,
    Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of B-Ga2O3 single crystals,
    Appl. Phys. Lett. 118, 062102 (2021).
  • Kumar A., Singh S., Patel A., Asokan K., Kanjilal D.,
    Thermoelectric properties of GaN with carrier concentration modulation: an experimental and theoretical investigation,
    Phys. Chem. Chem. Phys. 23, 1601-1609 (2021).
  • Bhogra A., Masarrat A., Hasina D., Meena R., Kumar A., Som T., Dong C.L., Chen C.L., Asokan K., Defects assisted structural and electrical properties of Ar ion irradiated TiO2/SrTiO3 bilayer
    Materials Letters, 282, 1288801 (2021).
  • Singh J., Gupta H., Kumar A., Singh R.G., Singh F.,
    Radiation stability and reliability of Cu–ZnO/P3OT hybrid heterostructures under swift heavy ion irradiations.
    Materials Science in Semiconductor Processing, 108, 104885, (2020).
  • Kumar S., Mariswamy V.K., Kumar A., Asokan K., and Krishnaveni S., Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation ECS Journal of Solid-State Science and Technology. 9, 093017, (2020).
  • Kumar A., Patel A., Singh S., Asokan K. and Kanjilal K., Apparatus for Seebeck coefficient measurement of wire, thin film and bulk materials in the wide temperature range (80 – 650 K),
    Review of Scientific Instruments, 90, 104901, (2019).
  • Bhogra A., Masarrat A., Meena R., Hasina D., Chen C.L., Som T., Kumar A., Asokan K.,Tuning the electrical and thermoelectric properties by N ion implantation in SrTiO3 thin films and their conduction mechanisms,
    Scientific Reports, 9 (1), 14486 (2019).
  • Sharma C., Visvkarma A.K., Laishram R., Kumar A., Rawal D.S., Vinayak S., Singh R., Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures,
    Microelectronics Reliability, 105, 113565, (2020).
  • Kumar P., Sharma V., Singh J.P., Kumar A., Chahal S., Sachdev K., Chae K.H., Kumar A., Asokan K., Kanjilal D., Investigations on magnetic and electrical properties of Zn doped Fe2O3 nanoparticles and their correlation with local electronic structure,
    Journal of Magnetism and Magnetic Materials, 489, 165398, (2019).
  • Neetika, Kumar S., Sanger A., Chourasiya H.K., Kumar A., Asokan K., Chandra R., Malik V.K., Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction,
    Journal of Alloys and Compounds, 797, 582-588, (2019).
  • Tak B.R., Garg M., Kumar A., Gupta V., Singh R.,
    Gamma irradiation effect on the performance of β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors for space applications, ECS Journal of Solid-State Science and Technology, 8(7), Q3149-Q3153, (2019).
  • Masarrat A., Bhogra A., Meena R., Bala M., Singh R., Barwal V., Dong C.L., Chen C.L., Som T., Kumar A., Niazi A., Asokan K.,
    Effect of Fe ion implantation on the thermoelectric properties and electronic structure of CoSb3 thin films, Journal of Alloys and Compounds, 9 (62), 36113, (2019).
  • Kumar A., Dhillon J., Verma S., Kumar P., Asokan K., and Kanjilal D., Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopy,
    Semiconductor Science & Technology, 33, 085008, (2018).
  • Kumar A., Singh R., Kumar P., Singh U.B., Asokan K., Karaseov P.A., Titov A.I., and Kanjilal D., In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation,
    Journal of Applied Physics, 123, 161539, (2018).
  • Kumar S., Kumar A., Tripathi A., Tyagi A., and Avasthi D.K.,
    Engineering of electronic properties of single layer graphene by swift heavy ion irradiation, Journal of Applied Physics, 123, 161533, (2018).
  • Kumar A., Dhillon J., Meena R.C., Kumar P., Asokan K., Singh R., and Kanjilal D., Enhancement of thermopower in GaN by ion irradiation and possible mechanisms, Applied Physics Letters, 111, 222102, (2017).
  • Kumar M.V., Kumar S., Cheng C., Asokan K., Kumar A., Shobha V., Karanth S.P., Krishnaveni S., Influence of high dose gamma irradiation on electrical characteristics of Si photodetectors,
    ECS Journal of Solid State Science & Technology, 6 (10), 132-135, (2017).
  • Kumar P., Kumar P., Kumar A., Sulania I., Chand F., Asokan K.,
    Structural, optical and magnetic properties of N ion implanted CeO2 thin films, RSC Advances, 7 (15), 9160, (2017).
  • Kumar P., Dixit G., Kumar A., Sharma V., Goyal R., Sachdev K., Annapoorni S., Asokan K., Structural, electrical and magnetic properties of dilutely Y doped NiFe2O4 nanoparticles,
    Journal of Alloys and Compounds, 685, 492–497, (2016).
  • Kumar P., Sharma V., Sarwa A., Kumar A., Shekhawat S., Goyal R., Sachdev K., Annapoorni S., Kandasami A., Kanjilal D.,
    Understanding the origin of ferromagnetism in Er doped ZnO system, RSC Advances, 6 (92), 89242-89249, (2016).
  • Kumar P., Kumar P., Kumar A., Meena R.C., Tomar R., Chand F., Asokan K., Structural, morphological, electrical and dielectric properties of Mn-doped CeO2, Journal of Alloys and Compounds, 672, 543-548 (2016).
  • Kumar A., Kumar P., Kumar K., Singh R., Asokan K., Kanjilal D.,
    role of growth temperature on the structural, optical and electrical properties of ZnO thin films, Journal of Alloys and Compounds, 649, 1205-1209 (2015).
  • Kumar A., Kumar T., Hähnel A., Kanjilal D., Singh R.,
    Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions,
    Applied Physics Letters, 104 (3), 033507, (2014).
  • Kumar A., Kumar M., Kaur R., Vinayak S., Singh R.,
    Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme, Applied Physics Letters, 104 (13), 1335101, (2014).
  • Kumar M., Kumar A., Thapa S., Christiansen S., Singh R.,
    XPS study of triangular GaN nano/micro needles grown by MOCVD technique, Materials Science and Engineering: B, 186, 8993, (2014).
  • Kumar A., Singh T., Kumar M., Singh R.,
    Sulphide passivation of GaN-based Schottky diodes,
    Current Applied Physics, 14 (3), 491495, (2014).
  • Kumar T., Kumar A., Agarwal D.C., Lalla N.P., Kanjilal, D.,
    Ion beam generated surface ripples: new insight in the underlying mechanism, Nanoscale Research Letter, 8 (1), 336, (2013).
  • Kumar T., Kumar A., Kanjilal D., An approach to tune the amplitude of surface ripple patterns, Applied Physics Letters, 103 (13), 131604, (2013).
  • Kumar A., Hähnel A., Kanjilal D., Singh R., Electrical and microstructural analysis of 200 MeV Ag14+ ion irradiated Ni/GaN Schottky barrier diode, Applied Physics Letters, 101 (15), 153508, (2012).
  • Kumar A., Kanjilal D., Kumar V., Singh R., Defect formation in GaN epitaxial layers due to swift heavy ion irradiation. Radiation Effects and Defects in Solids, 166 (89), 739-742, (2011).
  • Dadwal U., Kumar A., Scholz R., Reiche M., Kumar P., Boehm G., Amann M., Singh R., Blistering study of H implanted InGaAs for potential hetero integration applications, Semiconductor Science and Technology, 26 (8), 085032, (2011).

Peer-Reviewed Conferences Proceedings

  • Singh S.; Singh S.; Bijewar N.K.; Kumar A., Investigation of thermoelectric properties of magnetic insulator FeRuTiSi using first principle calculation. AIP Conference Proceedings 2265 (1), 030453 (2020).
  • Singh S., Singh S., Bijewar N.K., Kumar A., Thermoelectric properties of half-metallic FeMnScGa using first principle calculation. AIP Conference Proceedings 2265 (1), 030649 (2020).
  • Singh S., Singh S., Bijewar N.K., Kumar A., Electronic structure and thermoelectric properties of Co2CrGa using first principles calculations, AIP Conference Proceedings, 2115, 030368, (2019).
  • Dutt R.N., Soni V., Kumar A., Das A., Kar S., Singh F., Datta T.S.,
    Design of an RMS based steady state detector for a cryogenic temperature control process and automation of temperature vs material property characterizations, Third IFAC International Conference on Advances in Control and Optimization of Dynamical Systems (ACODS 2018), Hyderabad, India, February 8-22, 2018.
  • Titov A.I., Karaseov P.A., Struchkov A.I., Kumar A., Singh R., Kanjilal D., Electrical isolation of GaN by 200 MeV Ag ion irradiation, XXIII International Conference on Ion-Surface Interactions (ISI-2017), August 21-25, 2017, Moscow, Russia, Publ.by MEPhI Publishing, vol.2, pp. 120-123.
  • Kumar A., Singh T., Kumar K., Knez M., Singh R.
    Study of the structural, electrical and optical properties of ZnO thin films grown by ALD at low temperatures, MRS Fall Meeting Symposium M, Material Research Society: 2011, p 1394 (2011) M10.11.
  • Kumar A., Vinayak S., Singh R., Temperature dependence of IV characteristics of Au/GaN Schottky diodes, International Workshop on Physics of Semiconductor Devices (XV-IWPSD), New Delhi, India (Dec 1519, 2009). IEEE: 2009.
  • Kumar A., Vinayak S., Singh R. Investigation of current voltage characteristics of Ni/GaN Schottky barrier diodes, 9th International Conference on Nitride Semiconductors (ICNS9), Glasgow, UK, Wiley Online Library: 2011.
  • Kumar P., Chand F., Kumar P., Meena R.C., Kumar A., Asokan K.,
    Structural and dielectric properties of Cu doped CeO2, AIP Conference Proceedings: 2016, p 020299.
  • Kumar P., Sharma V., Kumar A., Sachdev K., Asokan K.
    Structural, morphological and vibrational properties of Fe2O3 nanoparticles, Proceedings of the International Conference on Nanotechnology for Better Living, Research Publishing, Srinagar: 2016, p 163.
  • Kumar A., Vinayak S., Singh R., Investigation of current voltage characteristics of Ni/GaN Schottky barrier diodes for potential HEMT applications. Journal of Nano and Electronic Physics 2011.
  • Kumar A., Kumar A., Asokan K., Kumar V., Singh R., Temperature dependence of 1/f noise in Gallium Nitride epitaxial layer,
    Journal of Nano and Electronic Physics 2011.
  • Kumar A., Kanjilal D., Kumar V., Singh R. Defect formation in GaN epitaxial layers due to SHI irradiation, AIP Conference Proceedings, 2011, p 1099.

 

Conference Presentations

  • Kumar et al., Defect assisted current transport mechanism in III-V semiconductors for thermoelectric applications, DRIP XVII Conference 2017 (October 8-12, 2017), Valladolid, Spain
  • Kumar et al., Study of the structural, electrical and optical properties of ZnO thin films grown by ALD at low temperatures,
    MRS Fall Meeting - Symposium M, 1394 (2011) M10.11.
  • Kumar et al., Defect formation in GaN epitaxial layers due to SHI irradiation, 55th DAE-Solid State Physics Symposium (DAE-SSPS), Manipal, India.
  • Kumar et al., Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes, 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK (July 10-15, 2011).
  • Kumar et al., Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes for potential HEMT applications,
    International Symposium of Semiconductor Materials and Devices (ISSMD), Vadodara, India (Jan 28-30, 2011).
  • Kumar et al., Effect of 200 MeV Ag ion irradiation on the properties of GaN epitaxial layers, Conference on Swift Heavy Ions in Materials Engineering and Characterization (SHIMEC), New Delhi, India (Oct 6-9, 2010).
  • Kumar et al., the Temperature dependence of I-V characteristics of Au/GaN Schottky diodes, International Workshop on Physics of Semiconductor Devices (XV-IWPSD), New Delhi, India (Dec 15-19, 2009).